极紫外光刻的光波长只有 13.5 纳米，为什么产生它要用高功率激光去轰击锡液滴？
EUV light is only 13.5 nm — why is it made by blasting tin droplets with a high-power laser?
没有天然材料能高效发出 13.5 纳米的光。办法是用激光把小小的锡液滴打成高温等离子体，锡的离子在那种状态下恰好辐射出 13.5 纳米的极紫外光，再用镜子收集起来。
No material naturally emits 13.5 nm efficiently. The trick is to blast tiny tin droplets into a hot plasma with a laser; tin ions at that state radiate strongly at 13.5 nm, and mirrors gather the light.
难度 专业 · 适合 大众
CC BY 4.0 · 已核验 · Verified 2026-10-04
来源 · Source
Harry J. Levinson 著《Principles of Lithography》（光刻原理）
Harry J. Levinson, Principles of Lithography
独立核验依据 · Independent verification: 核验依据 1 ISBN 978-0-8194-4045-7 (2019, SPIE)
#锡等离子体 #激光 #EUV源
光刻机为什么要用极紫外（EUV，约 13.5 纳米）光，而不直接用可见光？
Why does a lithography machine use extreme-UV (~13.5 nm) light instead of ordinary visible light?
光的衍射极限大约等于波长量级，可见光的几百纳米波长只能刻出很粗的线。要把电路做到几纳米，只能用波长更短的极紫外光，才能“描”出更细的图案。
Diffraction limits resolution to roughly the wavelength; visible light at hundreds of nm can't draw nanometer lines. Extreme-UV at ~13.5 nm is short enough to pattern the finest features.
难度 专业 · 适合 大众
CC BY 4.0 · 已核验 · Verified 2026-10-04
来源 · Source
Harry J. Levinson 著《Principles of Lithography》（光刻原理）
Harry J. Levinson, Principles of Lithography
独立核验依据 · Independent verification: 核验依据 1 ISBN 978-0-8194-4045-7 (2019, SPIE)
#EUV #衍射极限 #光刻
为什么芯片里最细的线条已经细到几个纳米，比可见光的波长还短得多？
Why are the finest chip lines only a few nanometers — far shorter than visible light's wavelength?
这不是用一束可见光直接“画”出来的，而是靠多重曝光、自对准和极短波长光源，把图案一点点“折叠”叠加出来。所以最终尺寸可以远小于单次曝光的波长。
It isn't drawn by one visible beam; multiple patterning, self-alignment and very short wavelengths 'fold' and overlay patterns so the final feature can be far smaller than a single exposure's wavelength.
难度 专业 · 适合 大众
CC BY 4.0 · 已核验 · Verified 2026-10-04
来源 · Source
Harry J. Levinson 著《Principles of Lithography》（光刻原理）
Harry J. Levinson, Principles of Lithography
独立核验依据 · Independent verification: 核验依据 1 ISBN 978-0-8194-4045-7 (2019, SPIE)
#多重曝光 #纳米 #图案
芯片制造为什么要像洗照片一样，在硅片上反复“涂胶、曝光、显影”？
Why does chip making repeat 'coat with resist, expose, develop' on the wafer like photo printing?
光刻胶是一种见光会变化、能被药水冲掉的材料。用掩模挡住一部分光，曝光再显影后，就在硅片上“留”下了要保留或要刻掉的区域，一层层叠起来就成了电路。
Photoresist changes where light hits and can be washed away. A mask blocks some light, so after exposure and development the wafer keeps or removes selected regions; stacking many layers builds the circuit.
难度 进阶 · 适合 大众
CC BY 4.0 · 已核验 · Verified 2026-10-04
来源 · Source
Harry J. Levinson 著《Principles of Lithography》（光刻原理）
Harry J. Levinson, Principles of Lithography
独立核验依据 · Independent verification: 核验依据 1 ISBN 978-0-8194-4045-7 (2019, SPIE)
#光刻胶 #掩模 #显影